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TIP32C A6006 A6006 BZX84C16 FBI4B5M1 AM6080 12198 0FB10
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  2003. 7. 24 1/3 semiconductor technical data ktb772 epitaxial planar pnp transistor revision no : 4 audio frequency power amplifier low speed switching features h complementary to ktd882. maximum rating (ta=25 ? ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _ electrical characteristics (ta=25 ? ) * pulse test : pulse width ? 350  s, duty cycle ? 2% pulsed note: h fe (2) classification o:100 q 200 , y:160 q 320 , gr:200 q 400 characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current dc i c -3 a pulse (note) i cp -7 base current (dc) i b -0.6 a collector power dissipation ta=25 ? p c 1.5 w tc=25 ? 10 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -1  a emitter-cut-off current i ebo v eb =-3v, i c =0 - - -1  a dc current gain * h fe (1) v ce =-2v, i c =-20ma 30 220 - h fe (2) (note) v ce =-2v, i c =-1a 100 160 400 collector-emitter saturation voltage * v ce(sat) i c =-2a, i b =-0.2a - -0.3 -0.5 v base-emitter saturation voltage * v be(sat) i c =-2v, i b =-0.2a - -1.0 -2.0 v current gain bandwidth product f t v ce =-5v, i c =-0.1a - 80 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 55 - pf note : pulse width " 10ms, duty cycle " 50%.
2003. 7. 24 2/3 ktb772 revision no : 4 0 collector current i c (a) -16 -12 -8 -20 -4 collector-emitter voltage v ce (v) 0 i c - v ce dc current gain h fe collector current i c (ma) h fe - i c saturation voltage vce(sat), vbe(sat), (mv) collector current i c (ma) v ce(sat) ,v be(sat) - i c collector current i c (a) -3 -5 1 collector-emitter voltage v ce (v) 31030 safe operating area -0.4 -1.0 -1.2 -1.6 1 5 10 30 50 100 300 -0.01 1k 3 500 -10 -3 -0.3 -0.1 -1 collector current i c (a) -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -10 100 300 1 k single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature f t - i c current gain bandwidth product f t (mhz) 1 5 10 50 30 100 300 500 1k -100 -1k -3k v =-2v ce -1k -10 -1 -100 -500 -1k -3 -10 -30 -100 -30 -300 -3k -0.03 v =-5v ce i max. (pulsed) c i max. (continuous) c dc o peration tc=25 c 100 s 1ms 10ms i =-1ma b i =-2ma b i =-3ma b i =-4ma b i =-5ma b i =-6ma b i =-7ma b i =-8ma b i =-9ma b i =-10ma b capacitance c ob (pf) -1 1 3 5 10 300 500 100 30 50 1k collector-base voltage v cb (v) -3 -30 -100 -300 -1k c ob - v cb i =0 e f=1mhz -5k be v (sat) v (sat) ce i /i =10 c b -1.8 -300 -30 -1 -3 -10 3 -3 -5 -50 -300 -3k -10k -10
2003. 7. 24 3/3 ktb772 revision no : 4 0 derating dt(%), i c 200 150 100 50 0 dt - tc 20 80 100 140 160 40 60 120 s/b limited dissipati on limited 0 power dissipation p c (w) 0 2 4 6 10 12 8 14 16 50 100 200 150 pc - tc case temperature tc ( c ) case temperature tc ( c)


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